Research of the key factors affecting the pulsing perfor mance of Zn/ MnO_2 batteries 影响锌锰电池脉冲性能的关键因素
After pulsing effect of SPDs limits the maximal key generation rate of a practical QKD system. Way to improve after pulsing effect is given too. 单光子探测器的后脉冲效应是限制实际QKD系统最大密钥产生速率的因素,本文介绍了抑制后脉冲效应的方法。